Micron G11 NAND to ship in 2027 with 5,400 MT/s speeds

Micron plans to launch its G11 3D NAND flash memory in the second half of 2027. The company detailed the roadmap at an industry event on October 23, 2026. G11 will use wafer-on-wafer bonding, a manufacturing technique that separates the memory array from the logic circuits.

The new chips will offer roughly double the storage density of the current G9 generation. Micron projects a jump from 21 Gb/mm2 to 42 Gb/mm2 in triple-level-cell form. Input/output speeds will increase by up to 50%, rising from 3,600 MT/s to 5,400 MT/s. The energy required to transfer each bit should drop by more than 25%.

Scott DeBoer, Micron's president and chief technology and products officer, confirmed the shift to bonding. He stated that the technology is now cost-effective and relevant to product specifications. DeBoer described G11 as the world's most advanced NAND. He noted that Micron had previously committed to adopting bonding when it made sense for performance and cost.

The design will include more than 400 layers, though Micron has not disclosed the exact count. The company says G11 will feature an industry-leading memory cell pitch. This suggests the density gains come from both additional layers and smaller cell dimensions. Micron will share more technical details in 2027 as high-volume production approaches.

Wafer-on-wafer bonding allows Micron to build the NAND array and peripheral circuitry on separate wafers. Each wafer uses a process optimized for its specific function. The two are then bonded together. This method gives engineers more freedom to optimize the memory array and logic independently compared to previous CMOS-under-array designs.

The improved bandwidth and efficiency target high-capacity SSDs for client and data center use. The technology also supports storage devices built for artificial intelligence workloads. These applications require greater bandwidth and better energy efficiency. Micron says the new chips will outperform next-generation NAND from rivals Kioxia and Samsung.

Beyond G11, Micron says it will continue scaling in all three dimensions. The company is developing high-mobility materials and ultra-dense cell architectures. These innovations aim to improve transistor characteristics and reduce energy use. DeBoer said the focus remains on new materials and densifying the cell architecture.